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| TSM3441 -20V P-Channel Enhancement-Mode MOSFET SOT-26 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -3A =100m RDS (on), Vgs @ -2.5V, Ids @ -2.0A =150m Features Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Block Diagram P-Channel MOSFET Ordering Information Part No. TSM3441CX6 Packing Tape & Reel 3,000/per reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Pulsed Drain Current, Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Ta = 25 C Ta = 70 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit -20V 8 -3 -10 2 1.3 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. Symbol Rjf Rja Limit 30 50 Unit o o C/W C/W TSM3441 1-3 2005/11 rev. B Electrical Characteristics (Ta = 25 C unless otherwise noted) o Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = - 250uA VGS = - 4.5V, ID = -3A VGS = - 2.5V, ID = -2.0A VDS = VGS, ID = - 250uA VDS = - 16V, V GS = 0V VGS = 8V, VDS = 0V VDS - 10V, V GS = -5V BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS - 20 --- 0.45 ---6 -------------- -80 112 ----6.5 5.4 0.8 1.1 5 19 95 65 447 127 80 --0.8 -100 150 --1.0 100 --10 --25 60 110 80 ----1.6 -1.2 V m V A nA A S VDS = - 5V, ID = - 3A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = -1.6A, VGS = 0V A V VSD VDS = - 6V, ID = - 3A, VGS = - 4.5V VDD = - 6V, RL = 6, ID = - 1A, V GEN = - 4.5V, RG = 6 VDS = - 6V, VGS = 0V, f = 1.0MHz nC nS pF Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM3441 2-3 2005/11 rev. B SOT-26 Mechanical Drawing SOT-26 DIMENSION DIM A B C D E F H L MILLIMETERS MIN 2.70 0.25 MAX 3.00 0.50 INCHES MIN 0.106 0.010 MAX 0.118 0.020 1.90(typ) 0.95(typ) 1.50 1.05 2.60 1.70 1.35 3.00 0.075(typ) 0.037(typ) 0.059 0.041 0.102 0.067 0.053 0.118 0.60(typ) 0.024(typ) TSM3441 3-3 2005/11 rev. B |
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